Diodes DMN2065UW - Manual (Page 4)

DMN2065UW
Document number: DS35554 Rev. 1 – 2
4 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0 4 8 12 16 20
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
C
iss
f = 1MHz
0 2 4 6 8 10 12 14 16 18 20
0.001
0.01
0.1
1
10
100
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
f = 1MHz
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W