Diodes DMN2114SN User Manual
Dmn2114sn new prod uc t, Features, Mechanical data
DMN2114SN
Document number: DS30829 Rev. 5 - 2
1 of 4
August 2011
© Diodes Incorporated
DMN2114SN
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low
On-Resistance
•
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
•
Lead Free By Design/RoHS Compliant (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
•
ESD Protected Gate
•
"Green" Device (Note 3)
Mechanical Data
• Case:
SC59
•
Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering & Date Code Information: See Page 3
•
Weight: 0.014 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage Continuous
V
GSS
±12
V
Drain Current
Continuous
Pulsed
I
D
1.2
4.0
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Total Power Dissipation
P
d
500
mW
Thermal Resistance, Junction to Ambient
R
θJA
250
°C /W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯
⎯
V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current @ T
j
= 25°C
I
DSS
⎯
⎯
10
μA
V
DS
= 24V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±10
μA
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
V
GS(th)
0.7
⎯
1.40 V
V
DS
= 10V, I
D
= 1.0mA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
0.100
0.160
Ω
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
Forward Transfer Admittance
|Y
fs
|
⎯
3.3
⎯
S
V
DS
= 10V, I
D
= 0.5A
Diode Forward Voltage
V
SD
⎯
0.8 1.1
V V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
180
⎯
pF
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
Output Capacitance
C
oss
⎯
120
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
45
⎯
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯
10
⎯
ns
V
DD
= 10V, I
D
= 0.5A,
V
GS
= 5.0V, R
GEN
= 50
Ω
Turn-Off Delay Time
t
D(OFF)
⎯
50
⎯
ns
Turn-On Rise Time
t
r
⎯
15
⎯
ns
Turn-Off Fall Time
t
f
⎯
45
⎯
ns
Notes:
1. Pulse width
≤300μS, duty cycle ≤2%.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our websit
SC-59
TOP VIEW
Internal Schematic
TOP VIEW
ESD protected
Source
Gate
Protection
Diode
Gate
Drain
D
G
S