Diodes DMN21D2UFB - Manual (Page 2)

DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN21D2UFB
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25 °C
T
A
= 70 °C
I
D
760
610
mA
t<5s
T
A
= 25
°C
T
A
= 70
°C
I
D
850
700
mA
Maximum Continuous Body Diode Forward Current (Note 6) I
S
0.8 A
Pulsed Drain Current (Note 7) I
DM
1.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
0.38
W
T A = 70°C 0.25
Thermal Resistance, Junction to Ambient (Note 4)
Steady State
R θJA
325
°C/W
t<5s 244
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.9
W
T
A
= 70°C 0.57
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
141
°C/W
t<5s 106
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current @T c = 25°C I DSS
- - 100 nA V DS = 20V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±1 μA V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
0.4 - 1.0 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 0.6 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
- 0.7 1.2 V
GS
= 2.5V, I
D
= 50mA
- 0.9 2.4 V
GS
= 1.8V, I
D
= 20mA
- 1.2 3.0 V
GS
= 1.5V, I
D
= 10mA
Forward Transfer Admittance |Y
fs
| 180 - - mS V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage V
SD
- 0.6 1.0 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 27.6 - pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C oss
- 4.0 - pF
Reverse Transfer Capacitance C
rss
- 2.8 - pF
Total Gate Charge V
GS
= 4.5V Q
g
- 0.41 - nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge V
GS
= 10V Q
g
- 0.93 - nC
Gate-Source Charge Q
gs
- 0.06 - nC
Gate-Drain Charge Q
gd
- 0.06 - nC
Turn-On Delay Time t
D(on)
- 3.5 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= 200mA
Turn-On Rise Time t r
- 4.2 - ns
Turn-Off Delay Time t
D(off)
- 19.6 - ns
Turn-Off Fall Time t
f
- 9.8 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10 μs pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.