Dmn2300ufb, A product line of diodes incorporated – Diodes DMN2300UFB User Manual
Page 4
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
4 of 6
May 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFB
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
2
4
6
8
10
12
14
16
18
20
1
10
100
1,000
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
V
, DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2
4
6
8
10
12
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig.10 Leakage Current vs. Gate-Source Voltage
I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0
2
4
6
8
0
0.5
1
1.5
2
2.5
3
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
, GA
T
E
-S
OURCE
VOL
T
AG
E (
V
)
GS
V
= 15V
I = 1A
DS
D