Diodes DMN2300U - Manual (Page 2)

DMN2300U
Datasheet number: DS35309 Rev. 2 - 2
2 of 7
www.diodes.com
July 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300U
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 5)
T
A
= 85°C (Note 5)
T A = 25°C (Note 4)
I
D
1.40
1.01
1.24
A
Pulsed Drain Current (Note 6) I
DM
11 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 4)
P
D
0.43 W
(Note 5) 0.55 W
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
288 °C/W
(Note 5) 228 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10
μ
s pulse duty cycle = 1%.
Thermal Characteristics
0
10
20
30
40
50
60
70
80
90
100
0.00001 0.001 0.1 10 1000
Single Pulse
Rthja = 220C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)
J A
P
(p
k
),
P
EAK TR
ANSI
E
N
T
PO
W
E
R (W
)
T1, PULSE DURATION SECTION (sec)
Fig. 1 Single Maximum Power Dissipation
100
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
DS
I (A) @
P = 10s
D
W
I (A) @ DC
D
I (A) @
P = 1s
D
W
I (A) @
P = 100ms
D
W
I (A) @
P = 10ms
D
W
I (A) @
P = 1ms
D
W
I (A) @
P = 100µs
D
W
I (A) @
P = 10µs
D
W
T = 150°C
T = 25°C
Single Pulse
J(MAX)
A
0.001
0.01
0.1
1
10
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D