Diodes DMN2300UFD User Manual
Dmn2300ufd, Product summary, Description and applications
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
September 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
Max
I
D
max
T
A
= 25
°C
(Notes 4)
20V
200m
Ω @ V
GS
= 4.5V
1.73A
260m
Ω @ V
GS
= 2.5V
1.50A
400m
Ω @ V
GS
= 1.8V
1.27A
500m
Ω @ V
GS
= 1.5V
1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load
switch
Features and Benefits
•
Low Gate Threshold Voltage
•
Fast Switching Speed
•
“Lead Free”, RoHS Compliant (Note 1)
•
Halogen and Antimony Free. "Green" Device (Note 2)
•
ESD Protected Gate 2KV
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
X1-DFN1212-3
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
• Terminals:
Finish
ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.005 grams (approximate)
Ordering Information
(Note 3)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2300UFD-7 KS2
7
8
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our w
3. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code Y
Z
A
B
C D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Top View
Bottom View
Pin-out Top view
X1-DFN1212-3
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)