Diodes DMG4406LSS - Manual (Page 2)

DMG4406LSS
Document number: DS35539 Rev. 8 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4406LSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.3
8.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
13.4
10.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.3
7.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
12.0
9.5
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
90 A
Avalanche Current (Note 7) L = 0.1mH I
AR
22 A
Repetitive Avalanche Energy (Note 7) L = 0.1mH E
AR
24 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
80 °C/W
t<10s 48 °C/W
Total Power Dissipation (Note 6) P
D
2.0 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
61 °C/W
t<10s 37 °C/W
Thermal Resistance, Junction to Case R
θJC
6.4 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.4 — 2.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 8 11
mΩ
V
GS
= 10V, I
D
= 12A
— 12 15 V
GS
= 4.5V, I
D
= 10A
Forward Transfer Admittance |Y
fs
| — 32 - S V
DS
= 5V, I
D
= 12A
Diode Forward Voltage V
SD
— 0.70 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 1281 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 145 —
Reverse Transfer Capacitance C
rss
— 125 —
Gate resistance R
g
— 1.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 12.5 —
nC V
DS
= 15V, I
D
= 12A
Total Gate Charge (V
GS
= 10V) Q
g
— 26.7 —
Gate-Source Charge Q
gs
— 3.6 —
Gate-Drain Charge Q
gd
— 4.4 —
Turn-On Delay Time t
D(on)
— 5.2 —
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25Ω, R
G
= 3Ω,
Turn-On Rise Time t
r
— 21.2 —
Turn-Off Delay Time t
D(off)
— 22.3 —
Turn-Off Fall Time t
f
— 5.1 —
Reverse Recovery Time t
rr
— 8.5 — ns
IF=12A, di/dt=500A/µs
Reverse Recovery Charge Q
rr
— 7.0 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.