Diodes DMG4468LK3 - Manual (Page 2)

DMG4468LK3
Document number: DS31958 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMG4468LK3
NE
W
P
R
OD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T A = +25°C
T
A
= +85°C
I
D
9.7
6.3
A
Pulsed Drain Current (Note 6) I DM
48 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.68 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C R
• JA
74.3 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 5 . Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - 1.0 µA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±100 nA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.05 - 1.95 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
-
11
17 16
25
m
Ω
V
GS
= 10V, I
D
= 11.6A
V GS = 4.5V, I D = 10A
Forward Transfer Admittance |Y
fs
| - 8 - S V
DS
= 10V, I
D
= 9A
Diode Forward Voltage V
SD
- 0.73 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 867 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 85 - pF
Reverse Transfer Capacitance C
rss
- 81 - pF
Gate Resistance R g
- 1.39 - Ω
V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
- 18.85 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 11.6A
Gate-Source Charge Q
gs
- 2.59 - nC
Gate-Drain Charge Q
gd
- 6.15 - nC
Turn-On Delay Time t D(on)
- 5.46 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.3 Ω, R
G
= 3 Ω
Turn-On Rise Time t
r
- 14.53 - ns
Turn-Off Delay Time t
D(off)
- 18.84 - ns
Turn-Off Fall Time t f
- 6.01 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.