Dmg6301udw new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG6301UDW User Manual

Page 2: Electrical characteristics, Dmg6301udw

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DMG6301UDW

Document number: DS36288 Rev. 1 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMG6301UDW

NEW PROD

UC

T



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

25 V

Gate-Source Voltage

V

GSS

8 V

Continuous Drain Current, V

GS

=

4.5V (Note 6)

T

A

= +25°C

T

A

= +70°C

I

D

0.24
0.19

A

Continuous Drain Current, V

GS

=

2.7V (Note 6)

T

A

= +25°C

T

A

= +70°C

I

D

0.22
0.17

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

1.5 A



Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation

(Note 5)

P

D

0.3

W

(Note 6)

0.37

Thermal Resistance, Junction to Ambient

(Note 5)

R

ΘJA

409

°C/W

(Note 6)

334

Thermal Resistance, Junction to Case

(Note 6)

R

ΘJC

137

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

25

— V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

— — 1 µA

V

DS

= 20V, V

GS

= 0V

Gate-Body Leakage

I

GSS

— — 100 nA

V

GS

= 8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.65 0.85 1.5 V V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(ON)

— 3.8 4

V

GS

= 4.5V, I

D

= 0.4A

— 3.1 5

V

GS

= 2.7V, I

D

= 0.2A

Forward Transconductance

|Y

fs

|

1

S

V

DS

= 5V,

I

D

=0.4A

Diode Forward Voltage

V

SD

— 0.76

1.2

V

V

DS

= V

GS

, I

D

= 0.25A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 27.9 —

pF

V

DS

= 10V, V

GS

= 0V,

f = 1MHz

Output Capacitance

C

oss

— 6.1 —

Reverse Transfer Capacitance

C

rss

— 2 —

Total Gate Charge

Q

g

— 0.36 —

nC

V

GS

= 4.5V, V

DS

= 5V,

I

D

= 0.2A

Gate-Source Charge

Q

gs

— 0.06 —

Gate-Drain Charge

Q

gd

— 0.04 —

Turn-On Delay Time

t

D(on)

— 2.9 —

nS

V

GS

= 4.5V, V

DS

= 6V

I

D

= 0.5A, R

G

= 50Ω

Turn-On Rise Time

t

r

— 1.8 —

Turn-Off Delay Time

t

D(off)

— 6.6 —

Turn-Off Fall Time

t

f

— 2.3 —

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.



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