Diodes DMG6402LVT - Manual (Page 2)

DMG6402LVT
Document number: DS35831 Rev. 3 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMG6402LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.0
4.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
7.5
5.9
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.0
4.0
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6
4.8
A
Maximum Body Diode Forward Current (Note 5) I
S
2 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
31 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.75
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
72
°C/W t<10s 50
Thermal Resistance, Junction to Case (Note 5) R
JC
23
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
  1 μ A V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 1.5 2 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
 22 30
m 
V
GS
= 10V, I
D
= 7A
 32 42 V
GS
= 4.5V, I
D
= 5.6A
Forward Transfer Admittance |Y
fs
|  10  S V
DS
= 5V, I
D
= 7A
Diode Forward Voltage V
SD
 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
 498 
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 52 
Reverse Transfer Capacitance C
rss
 45 
Gate Resistance R
G
 2.4   V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
 11.4 
nC  V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A Gate-Source Charge Q
gs
 1.4 
Gate-Drain Charge Q
gd
 2 
Turn-On Delay Time t
D(on)
 3.4 
nS
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
Turn-On Rise Time t
r
 6.2 
Turn-Off Delay Time t
D(off)
 13.9 
Turn-Off Fall Time t
f
 2.8 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.