Diodes DMG7408SFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 5 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMG7408SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= 25°C
T A = 70°C
I D
7.0
5.5
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
9.5
7.5
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
6.0
5.7
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
8.0
6.3
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
66 A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
3.0 A
Avalanche Current (Note 7) I
AS
9 A
Avalanche Energy (Note 7) E
AS
12 mJ
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
131 °C/W
t<10s 72 °C/W
Total Power Dissipation (Note 6) P
D
2.1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
63 °C/W
t<10s 35 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJC 7.1 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I DSS
- - 1 μA V DS = 30V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 1.45 2.4 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
15
25 23
33
mΩ
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance |Y
fs
| - 11 - S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V
SD
- 0.72 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 478.9 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 96.7 - pF
Reverse Transfer Capacitance C
rss
- 61.4 - pF
Gate Resistance R
g
0.4 1.1 1.6 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 5.0 8
nC
V
DS
= 15V,I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g
- 10.5 17
Gate-Source Charge Q gs
- 1.8 - nC
Gate-Drain Charge Q
gd
- 1.6 - nC
Turn-On Delay Time t
D(on)
- 2.9 - ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3 Ω, R
L
= 1.5 Ω
Turn-On Rise Time t r
- 7.9 - ns
Turn-Off Delay Time t
D(off)
- 14.6 - ns
Turn-Off Fall Time t
f
- 3.1 - ns
Notes: 5. R θJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L = 0.3mH, TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.