Electrical characteristics, Dmg7430lfg – Diodes DMG7430LFG User Manual
Page 3
DMG7430LFG
Document number: DS35497 Rev. 5 - 2
3 of 7
February 2012
© Diodes Incorporated
DMG7430LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
POWERDI is a registered trademark of Diodes Incorporated
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
R
= r
* R
θJA(t)
(t)
θ
θ
JA
JA
R
= 140 C/W
Duty Cycle, D = t1/t2
°
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
- - 1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.4 - 2.5 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
- 7 11
mΩ
V
GS
= 10V, I
D
= 20A
- 11 15
V
GS
= 4.5V, I
D
= 20A
Forward Transfer Admittance
|Y
fs
|
- 74 - S
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
V
SD
- 0.75
1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 1281 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 145 - pF
Reverse Transfer Capacitance
C
rss
- 125 - pF
Gate resistance
R
g
- 1.2 - Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
- 12.5 - nC
V
DS
= 15V, I
D
= 12A
Total Gate Charge (V
GS
= 10V)
Q
g
- 26.7 - nC
Gate-Source Charge
Q
gs
- 3.6 - nC
Gate-Drain Charge
Q
gd
- 4.4 - nC
Turn-On Delay Time
t
D(on)
- 5.2 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25
Ω, R
G
= 3
Ω,
Turn-On Rise Time
t
r
- 21.2 - ns
Turn-Off Delay Time
t
D(off)
- 22.3 - ns
Turn-Off Fall Time
t
f
- 5.1 - ns
Reverse Recovery Time
T
rr
- 8.5 - ns
I
F
= 12A, di/dt = 500A/
μs
Reverse Recovery Charge
Q
rr
- 7.0 - nC
I
F
= 12A, di/dt = 500A/
μs
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
5. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.