Diodes DMN3010LFG - Manual (Page 4)

DMN3010LFG
Document number: DS36195 Rev. 3 - 2
4 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN3010LFG
NEW PROD
UC
T
T , AMBIENT TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
ENT (
A
)
S
T = 25°C
A
0 0.3 0.6 0.9 1.2 1.5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF)
T
10
100
1000
10000
0 5 10 15 20 25 30
C
iss
f = 1MHz
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
V = 15V
I = A
DS
D
18
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(
t),
T
R
A
N
SI
E
N
T
T
H
E
R
MAL
R
ESIS
TA
N
C
E
0.001
0.01
0.1
1
1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001
R (t) = r(t) * R
R = 137°C/W
Duty Cycle, D = t1/t2
θ θ
θ
JA JA
JA
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse