Diodes DMN3010LSS - Manual (Page 2)

DMN3010LSS
Document number: DS31259 Rev. 6 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DMN3010LSS
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 ⎯ ⎯ V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.1 ⎯ 2.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 9
13
m Ω
V
GS
= 10V, I
D
= 16A
V
GS
= 4.5V, I
D
= 10A
Forward Transconductance g fs
⎯ 16 ⎯ S V DS = 10V, I D = 12A
Diode Forward Voltage (Note 5) V
SD
0.5 ⎯ 1.2 V V
GS
= 0V, I
S
= 16A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 2096 ⎯ pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 329 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 258 ⎯ pF
Gate Resistance R G
⎯ 1.2 ⎯ Ω
V GS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q
g
⎯ 22.4
43.7 ⎯
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 16A
V DS = 15V, V GS = 10.0V, I D = 16A
Gate-Source Charge Q
gs
⎯ 5.5 ⎯
V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Gate-Drain Charge Q
gd
⎯ 12.6 ⎯ V
DS
= 15V, V
GS
= 10V, I
D
= 16A
Turn-On Delay Time t
d(on)
⎯ 7.11 ⎯
ns
V
GS
= 10V, V
DS
= 15V,
R
D
= 15 Ω, R
G
= 6 Ω
Rise Time t
r
⎯ 10.3 ⎯
Turn-Off Delay Time t
d(off)
⎯ 58.3 ⎯
Fall Time t
f
⎯ 32.1 ⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
I
, DRAIN CURRENT
(A
)
D
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = 2.5V
GS
V = 4.5V
GS V = 10V
GS
V = 1.5V
GS
V = 3.0V
GS
0
2
4
6
8
10
12
14
16
18
20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 2 Source Current vs. Source-Drain Voltage
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A