Diodes DMN3016LFDE - Manual (Page 2)

DMN3016LFDE
Document number: DS35900 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN3016LFDE
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10
8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
12
9
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
2.5 A
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I
DM
90 A
Avalanche Current (Note 7) L = 0.1mH I
AR
22 A
Repetitive Avalanche Energy (Note 7) L = 0.1mH E
AR
24 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.73
W
T
A
= +70°C 0.47
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
171
°C/W
t<10s 121
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.02
W
T
A
= +70°C 1.30
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
62
°C/W t<10s 42
Thermal Resistance, Junction to Case (Note 6) Steady state R
JC
9.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
- - 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.4 - 2.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
- 8 12
mΩ
V
GS
= 10V, I
D
= 11A
- 12 16 V
GS
= 4.5V, I
D
= 9A
Forward Transfer Admittance |Y
fs
| - 32 - S V
DS
= 5V, I
D
= 12A
Diode Forward Voltage V
SD
- 0.70 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1415 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 119 -
Reverse Transfer Capacitance C
rss
- 82 -
Gate resistance R
g
- 2.6 3.2 Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 11.3 -
nC V
DS
= 15V, I
D
= 12A
Total Gate Charge (V
GS
= 10V) Q
g
- 25.1 -
Gate-Source Charge Q
gs
- 3.5 -
Gate-Drain Charge Q
gd
- 3.6 -
Turn-On Delay Time t
D(on)
- 4.8 -
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25Ω, R
G
= 3Ω,
Turn-On Rise Time t
r
- 16.5 -
Turn-Off Delay Time t
D(off)
- 26.1 -
Turn-Off Fall Time t
f
- 5.6 -
Reverse Recovery Time t
rr
- 12.3 - ns
I
F
= 12A, di/dt = 500A/μs
Reverse Recovery Charge Q
rr
- 10.4 - nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.