Diodes DMN3018SFG - Manual (Page 2)

DMN3018SFG
Document number: DS35638 Rev. 4 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3018SFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.5
6.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11.3
9.1
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.6
5.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.7
7.0
A
Maximum Continuous Body Diode Forward Current (Note 4) I
S
2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
60 A
Avalanche Current (Note 7) L = 0.1mH I
AS
18 A
Avalanche Energy (Note 7) L = 0.1mH E
AS
16 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.0 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
126
°C/W
t<10s 71
Total Power Dissipation (Note 6) P
D
2.2 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
56
°C/W t<10s 31
Thermal Resistance, Junction to Case R
θJC
7.0
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 1.7 2.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 16 21
mΩ
V
GS
= 10V, I
D
= 10A
— 21 35 V
GS
= 4.5V, I
D
= 8.5A
Diode Forward Voltage V
SD
0.5 — 1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 697 — pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 97 — pF
Reverse Transfer Capacitance C
rss
— 67 — pF
Gate resistance R
g
— 1.47 — Ω V
DS
= 0V, V
GS
= 0V,f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 6.0 — nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 9A
Total Gate Charge (V
GS
= 10V) Q
g
— 13.2 — nC
Gate-Source Charge Q
gs
— 2.2 — nC
Gate-Drain Charge Q
gd
— 1.8 — nC
Turn-On Delay Time t
D(on)
— 4.3 — ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 15Ω,I
D
= 1A, R
G
= 6Ω
Turn-On Rise Time t
r
— 4.4 — ns
Turn-Off Delay Time t
D(off)
— 20.1 — ns
Turn-Off Fall Time t
f
— 4.1 — ns
Reverse Recovery Time T
rr
— 7.3 — ns
I
F
= 9A, di/dt = 500A/µs
Reverse Recovery Charge Q
rr
— 7.9 — nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.