Diodes DMN3018SSD User Manual
Page 4
DMN3018SSD
Document number: DS35583 Rev. 3 - 2
4 of 6
January 2013
© Diodes Incorporated
DMN3018SSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.4
0.8
1.2
1.6
2.0
2.4
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, G
A
TE TH
RESHO
L
D VO
LT
AGE
(
V
)
GS
(t
h
)
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(V
)
S
T = 25°C
A
0
2
4
6
8
10
12
14
16
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 9 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 15V, I = A
DS
D
9
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
iss
f = 1MHz
C
oss
C
rss
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
10
1
0.1
0.01
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ