Diodes DMN3024LSD - Manual (Page 4)

DMN3024LSD
Document Revision: 3
4 of 8
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July 2009
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A Product Line of
Diodes Incorporated
DMN3024LSD
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
DSS
30 ⎯ ⎯ V I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 0.5 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
1.0 ⎯ 3.0 V I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
⎯ ⎯
0.024
Ω
V
GS
= 10V, I
D
= 7.0A
0.036 V GS = 4.5V, I D = 6.0A
Forward Transconductance (Notes 8 & 9) g
fs
⎯ 16.5 ⎯ S V
DS
= 15V, I
D
= 7.1A
Diode Forward Voltage (Note 8) V
SD
⎯ 0.82 1.2 V I
S
= 1.7A, V
GS
= 0V
Reverse recovery time (Note 9) t
rr
12 ⎯ ns
I
S
= 2.2A, di/dt= 100A/
μs
Reverse recovery charge (Note 9) Q
rr
⎯ 4.8 ⎯ nC
DYNAMIC CHARACTERISTICS ( Note 9)
Input Capacitance C
iss
⎯ 608 ⎯ pF
V DS = 15V, V GS = 0V
f= 1MHz
Output Capacitance C oss
⎯ 132 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 71 ⎯ pF
Total Gate Charge Q
g
⎯ 6.3 ⎯ nC
V
DS
= 15V, V
GS
= 4.5V
I
D
= 7A
Total Gate Charge Q g
⎯ 12.9 ⎯ nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
Gate-Source Charge Q
gs
⎯ 2.5 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 2.5 ⎯ nC
Turn-On Delay Time (Note 10) t
D(on)
⎯ 2.9 ⎯ ns
V DD = 15V, V GS = 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
⎯ 3.3 ⎯ ns
Turn-Off Delay Time (Note 10) t D(off)
⎯ 16 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 8 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.