Diodes DMN3024LSS - Manual (Page 2)

DMN3024LSS
Document Revision: 3
2 of 8
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July 2009
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DMN3024LSS
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
30 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Note 3)
I
D
8.5
A T
A
= 70°C (Note 3) 6.8
(Note 2) 6.4
Pulsed Drain current V GS = 10V (Note 4) I DM
36 A
Continuous Source current (Body diode) (Note 3) I
S
4.5 A
Pulsed Source current (Body diode) (Note 4) I
SM
36 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P D
1.6
12.5 W
mW/
°C
(Note 3)
2.8
22.2
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
80
°C/W
(Note 3) 45
Thermal Resistance, Junction to Lead (Note 5) R θJL 35 °C/W
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.