Diodes DMN3033LDM User Manual
Dmn3033ldm, Features, Mechanical data
DMN3033LDM
Document number: DS31345 Rev. 4 - 2
1 of 5
July 2009
© Diodes Incorporated
DMN3033LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
Low Gate Charge
• Low
R
DS(ON)
:
• 33
m
Ω @V
GS
= 10V
• 40
m
Ω @V
GS
= 4.5V
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
"Green" Device (Note 4)
Mechanical Data
• Case:
SOT-26
•
Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.008 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1) Continuous
T
A
= 25°C
T
A
= 70°C
I
D
6.9
5.8
A
Pulsed Drain Current (Note 2)
I
DM
20 A
Body-Diode Continuous Current (Note 1)
I
S
2.25 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 1)
P
D
2 W
Thermal Resistance, Junction to Ambient (Note 1) t
≤10s
R
θJA
62.5
°C /W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t
≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our webs
SOT-26
TOP VIEW
Equivalent Circuit
G
S
D
D
D
D