Diodes DMN3051LDM - Manual (Page 2)

DMN3051LDM
Document number: DS31523 Rev. 3 - 2
2 of 5
www.diodes.com
November 2009
© Diodes Incorporated
DMN3051LDM
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 800 nA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯
⎯ ⎯
⎯ ±80
±800
nA
V
GS
=
±12V, V
DS
= 0V
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V GS(th)
1.2 ⎯ 2.2 V V DS = V GS , I D = 250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯
28
50 38
64
m
Ω
V
GS
= 10V, I
D
= 6A
V
GS
= 4.5V, I
D
= 5A
Forward Transfer Admittance |Y fs |
⎯ 5.2 ⎯ S V DS = 5V, I D = 3.1A
Diode Forward Voltage (Note 4) V
SD
⎯ 0.78 1.16 V V
GS
= 0V, I
S
= 2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 424 ⎯ pF
V
DS
= 5V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
⎯ 115 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 81 ⎯ pF
Gate Resistance R
G
⎯ 1.3 ⎯ Ω
V
GS
= 0V V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q
g
⎯ 4.3
8.6 ⎯
nC
V
DS
= 10V, V
GS
= 4.5V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V, I
D
= 10A
Gate-Source Charge Q gs
⎯ 1.2 ⎯
V DS = 10V, V GS = 10V, I D = 10A
Gate-Drain Charge Q
gd
⎯ 2.5 ⎯
V
DS
= 10V, V
GS
= 10V, I
D
= 10A
Notes: 4. Short duration pulse test used to minimize self-heating effect.
I
, DRAIN CURRENT
(
A
)
D
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
0 0.5 1 1.5 2 2.5 3
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
1
2
3
4
5
6
1.5 2.5 3.5
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A