Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3065LW User Manual

Page 2: Dmn3065lw

Advertising
background image

DMN3065LW

Document number: DS36078 Rev. 5 - 2

2 of 5

www.diodes.com

April 2014

© Diodes Incorporated

DMN3065LW



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

V

DSS

30

V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 5)

I

D

4

A

Body-Diode Continuous Current (Note 5)

I

S

1

A



Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

770 mW

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

162 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30

⎯

⎯

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

⎯

⎯

1

µA

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage

I

GSS

⎯

⎯

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

0.5

⎯

1.5

V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS (ON)

⎯
⎯

⎯
⎯
⎯

52
65
85

mΩ

V

GS

= 10V, I

D

= 4A

V

GS

= 4.5V, I

D

= 3A

V

GS

= 2.5V, I

D

= 2A

Source-Drain Diode Forward Voltage

V

SD

⎯

⎯

1.2 V

V

GS

= 0V, I

S

= 2.0A

DYNAMIC CHARACTERISTICS(7)
Input Capacitance

Ciss

⎯

465

⎯

pF

VDS = 15V, VGS = 0V, f =
1.0MHz

Output Capacitance

Coss

⎯

49.5

⎯

pF

Reverse Transfer Capacitance

Crss

⎯

43.8

⎯

pF

Gate Resistance

R

g

⎯

2.3

⎯

Ω

V

DS

=0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

=10V)

Q

g

⎯

11.7

⎯

nC

V

DS

= 15V, I

D

= 4 A

Total Gate Charge (V

GS

=4.5V)

Q

g

⎯

5.5

⎯

nC

V

DS

= 15V, I

D

= 4 A

Gate-Source Charge

Q

gs

⎯

1.1

⎯

nC

Gate-Drain Charge

Q

gd

⎯

1.8

⎯

nC

Turn-On Delay Time

t

D(on)

⎯

1.9

⎯

ns

V

DD

= 15V, V

GEN

= 10V,

R

GEN

=3Ω, R

L

= 3.75Ω

Turn-On Rise Time

t

r

⎯

1.6

⎯

ns

Turn-Off Delay Time

t

D(off)

⎯

10.3

⎯

ns

Turn-Off Fall Time

t

f

⎯

2.0

⎯

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect.

7.

Guaranteed by design. Not subject to production testing.










Advertising