Dmn3067lw new prod uc t advanced information, Maximum ratings, Thermal characteristics – Diodes DMN3067LW User Manual

Page 2: Electrical characteristics, Dmn3067lw

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DMN3067LW

Document number: DS36640 Rev. 4 - 2

2 of 6

www.diodes.com

March 2014

© Diodes Incorporated

DMN3067LW

NEW PROD

UC

T

ADVANCED INFORMATION


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 6) V

GS

= 4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

2.6
2.1

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

10 A




Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation

(Note 5)

P

D

0.5

W

(Note 6)

1.1

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

241

°C/W

(Note 6)

130

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

30

V

V

GS

= 0V,

I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

1 µA

V

DS

= 30V,

V

GS

= 0V

Gate-Body Leakage

I

GSS

±10

μA

V

GS

=

±12V,

V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

1.5 V

V

DS

= V

GS

,

I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

48 67

mΩ

V

GS

= 4.5V,

I

D

=

2.5A



50 70

V

GS

= 4.0V,

I

D

=

2.5A



70 98

V

GS

= 2.5V,

I

D

=

2.5A

Diode Forward Voltage

V

SD



1.2

V

V

GS

= 0V, I

S

= 0.6A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

447

pF

V

DS

= 10V,

V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

54

Reverse Transfer Capacitance

C

rss

41

Gate Resistance

R

G



23



V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge

Q

g

4.6

nC

V

GS

= 4.5V, V

DS

= 15V,

I

D

= 2.5A

Gate-Source Charge

Q

gs

1.0

Gate-Drain Charge

Q

gd

1.0

Turn-On Delay Time

t

D(on)

3.8

nS

V

DD

= 15V, I

D

= 1.25A,

V

GEN

= 4.5V

,

R

GEN

= 10Ω

Turn-On Rise Time

t

r

5.2

Turn-Off Delay Time

t

D(off)



15



Turn-Off Fall Time

t

f



6.1



Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.





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