Diodes DMN3115UDM - Manual (Page 2)

DMN3115UDM
Document number: DS31187 Rev. 8 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
DMN3115UDM
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 6) I
D
3.2 A
Pulsed Drain Current (Note 6) I
DM
12.8 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
900 mW
Thermal Resistance, Junction to Ambient R
θJA
139 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 100μA
Zero Gate Voltage Drain Current I
DSS
  1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  5 μA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5  1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)

40
50
76 60
80
130
mΩ
V
GS
= 4.5V, I
D
= 6A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.5V, I
D
= 1.0A
Forward Transfer Admittance |Y
fs
|  8  S V
DS
=10V, I
D
= 6A
Diode Forward Voltage (Note 7) V
SD
 0.7 1.1 V V
GS
= 0V, I
S
= 2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 476  pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 77  pF
Reverse Transfer Capacitance C
rss
 59  pF
Notes: 6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
7. Short duration pulse test used to minimize self-heating effect.
0
1
2
3
4
5
6
7
8
9
10
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
0
1
2
3
4
5
6
7
8
9
10
0.5 1 1.5 2 0