Diodes DMN3150LW User Manual
Features, Mechanical data, Maximum ratings
DMN3150LW
Document number: DS31514 Rev. 1 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
DMN3150LW
N
EW P
RO
D
U
C
T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Low On-Resistance:
R
DS(ON)
< 88m
Ω @ V
GS
= 4.5V
R
DS(ON)
< 138m
Ω @ V
GS
= 2.5V
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-323
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.006 grams (approximate)
Source
EQUIVALENT CIRCUIT
Gate
Drain
SOT-323
D
G
S
Pin Configuration
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
28
V
Gate-Source Voltage
V
GSS
±12
V
Drain Current (Note 1) T
A
= 25°C
T
A
= 70°C
I
D
1.6
1.2
A
Drain Current (Note 1)
Pulsed
I
DM
6.4
A
Body-Diode Continuous Current (Note 1)
I
S
1.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
P
D
350 mW
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 1)
R
θJA
357 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV
DSS
28
⎯
⎯
V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
800
nA
V
DS
= 28V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
±80
±800
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±19V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(th)
0.62
0.94
1.4
V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
⎯
73
115
88
138
m
Ω
V
GS
= 4.5V, I
D
= 1.6A
V
GS
= 2.5V, I
D
= 1.2A
Forward Transconductance
|Y
fs
|
⎯
5.4
⎯
S
V
DS
= 5V, I
D
= 2.7A
Source-Drain Diode Forward Voltage
V
SD
⎯
⎯
1.16 V
V
GS
= 0V, I
S
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
305
⎯
pF
Output Capacitance
C
oss
⎯
74
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
48
⎯
pF
V
DS
= 5V, V
GS
= 0V
f = 1.0MHz
Notes:
1. Device mounted on 1in
2
FR-4 PCB on 2oz. Copper. t
≤ 10 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.