Diodes DMN3190LDW - Manual (Page 2)

DMN3190LDW
Document number: DS36192 Rev. 4 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN3190LDW
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1000
900
mA
T < 5s
T
A
= +25°C
T
A
= +70°C
I
D
1300
1000
mA
Maximum Continuous Body Diode Forward Current (Note 5) I
S
0.5 A
Pulsed Drain Current (10µs pulse, duty cycle=1%) I
DM
2.0 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.32
W
T
A
= +70°C 0.19
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
395
°C/W
T < 5s 320
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
0.4
W
T
A
= +70°C 0.25
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
320
°C/W T < 5s 250
Thermal Resistance, Junction to Case R
θJC
143
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.5 — 2.8 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 122 190
mΩ
V
GS
= 10V, I
D
= 1.3A
— 181 335 V
GS
= 4.5V, I
D
= 290mA
Forward Transfer Admittance |Y
fs
| — 0.7 — mS V
DS
= 10V, I
D
= 250mA
Diode Forward Voltage V
SD
— — 1.2 V V
GS
= 0V, I
S
= 250mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 87 — pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 17 — pF
Reverse Transfer Capacitance C
rss
— 12 — pF
Gate Resistance R
g
— 69.8 — Ω f = 1MHz , V
GS
= 0V, V
DS
= 0V
Total Gate Charge (V
GS
= 4.5V) Q
g
— 0.9 — nC
V
DS
= 10V, I
D
= 250mA Total Gate Charge (V
GS
= 10V) Q
g
— 2.0 — nC
Gate-Source Charge Q
gs
— 0.3 — nC
Gate-Drain Charge Q
gd
— 0.3 — nC
Turn-On Delay Time t
D(on)
— 4.5 — ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 10Ω, I
D
= 100mA
Turn-On Rise Time t
r
— 8.9 — ns
Turn-Off Delay Time t
D(off)
— 30.3 — ns
Turn-Off Fall Time t
f
— 15.6 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.