Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN32D2LV User Manual

Page 2: Dmn32d2lv

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DMN32D2LV

Document number: DS31121 Rev. 7 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated

DMN32D2LV



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

10

V

Drain Current (Note 5)

I

D

400 mA





Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Total Power Dissipation (Note 5)

P

D

400 mW

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

313

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

C





Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

30

V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current @ T

J

= +25°C

I

DSS

1

A

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage @ T

J

= +25°C

I

GSS




1

10

500
100

A
nA
nA

V

GS

= ±10V, V

DS

= 0V

V

GS

= ±5V, V

DS

= 0V

V

GS

= ±2.5V, V

DS

= 0V

Gate-Body Leakage (Note 7) @ T

J

= +105°C

@ T

J

= +125°C

I

GSS

8

15

100
100

nA
nA

V

GS

= ±2.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

0.6

1.2 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)







2.2
1.5
1.2

V

GS

= 1.8V, I

D

= 20mA

V

GS

= 2.5V, I

D

= 20mA

V

GS

= 4.0V, I

D

= 100mA

Forward Transconductance

|Y

fs

|

100

mS

V

DS

=10V, I

D

= 0.1A

Source-Drain Diode Forward Voltage

V

SD

0.5

1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

39

pF

V

DS

= 3V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

10

pF

Reverse Transfer Capacitance

C

rss

3.6

pF

Switching Time

Turn-on Time

t

on



11



nS

V

DD

= 5V, I

D

= 10 mA,

V

GS

= 5V

Turn-off Time

t

off



51



nS

Notes:

5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
















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