Diodes DMN3730U - Manual (Page 3)

DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
3 of 7
www.diodes.com
July 2011
© Diodes Incorporated
DMN3730U
A Product Line of
Diodes Incorporated
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
R (t) = r(t)*R
R = 176C/W
Duty Cycle, D = t1/t2
θ θ
θ
JA JA
JA
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
0.001
0.01
0.1
1
R
(t
),
TRA
N
SI
ENT THE
R
M
A
L
RE
SI
SI
T
A
NCE
r(t) @ D=Single Pulse
r(t) @ D=0.005
r(t) @ D=0.01
r(t) @ D=0.01
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current I
DSS
- - 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I GSS
- - 3 μA
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.45 - 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 7) R
DS(on)
- -
460
mΩ
V
GS
= 4.5V, I
D
= 200mA
560 V
GS
= 2.5V, I
D
= 100mA
730 V
GS
= 1.8V, I
D
= 75mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 10mA
Diode Forward Voltage (Note 7) V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 64.3 - pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 6.1 - pF
Reverse Transfer Capacitance C
rss
- 4.5 - pF
Gate Resistance R
g
- 70 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 1.6 - nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
- 0.2 - nC
Gate-Drain Charge Q gd
- 0.2 - nC
Turn-On Delay Time t
D(on)
- 3.5 - ns
V
DS
= 10V, I
D
= 1A
V GS = 10V, R G = 6Ω
Turn-On Rise Time t
r
- 2.8 - ns
Turn-Off Delay Time t D(off)
- 38 - ns
Turn-Off Fall Time t
f
- 13 - ns
Notes: 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width
≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.