Diodes DMN4800LSSL - Manual (Page 2)

DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN4800LSSL
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 5) V GS = 10V Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.0
6.4
A
Drain Current (Note 5) V GS = 10V Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.7
5.3
A
Pulsed Drain Current (Note 6) I
DM
50 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
1.46 W
Thermal Resistance, Junction to Ambient R
θJA
86 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 ⎯ ⎯ V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 1.2 1.6 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
11
14 14
20
mΩ
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 7A
Forward Transconductance g
fs
⎯ 8 ⎯ S V
DS
= 10V, I
D
= 8A
Diode Forward Voltage (Note 7) V
SD
⎯ 0.72 0.94 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 798 ⎯ pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 128 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 122 ⎯ pF
Gate Resistance R
G
⎯ 1.37 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
⎯ 8.7 ⎯
nC V
GS
= 5V, V
DS
= 15V, I
D
= 9A Gate-Source Charge Q
gs
⎯ 1.7 ⎯
Gate-Drain Charge Q
gd
⎯ 2.4 ⎯
Turn-On Delay Time t
d(on)
⎯ 5.03 ⎯
ns
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15Ω , R
G
= 6.0Ω , I
D
= 1A
Rise Time t
r
⎯ 4.50 ⎯
Turn-Off Delay Time t
d(off)
⎯ 26.33 ⎯
Fall Time t
f
⎯ 8.55 ⎯
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.