Diodes DMN63D8LDW - Manual (Page 2)

DMN63D8LDW
Document number: DS36021 Rev. 3 - 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN63D8LDW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V GS = 10V
Steady
State
T
A
= +25°C
T A = +70°C
I D
220
170
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
260
210
mA
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
800 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P D
300
mW
(Note 6) 400
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
435
°C/W (Note 6) 330
Thermal Resistance, Junction to Case (Note 6) R θJC 139
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
30 ⎯ ⎯ V V GS = 0V, I D = 250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1.0 µA V
DS
= 30V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ ±10.0
μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.8 ⎯ 1.5 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ ⎯
2.8
Ω
V
GS
= 10.0V, I
D
= 250mA
⎯ ⎯ 3.8 V GS = 5V, I D = 250mA
⎯ ⎯ 4.2 V
GS
= 4.5V, I
D
= 250mA
⎯ ⎯
4.5 V
GS
= 4.0V, I
D
= 250mA
⎯ ⎯
13 V
GS
= 2.5V, I
D
= 10mA
Forward Transconductance g
FS
80 ⎯ ⎯ mS V
DS
= 10V, I
D
= 0.115A
Diode Forward Voltage V
SD
- 0.8 1.2 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 22.0 ⎯
pF V
DS
= 25V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
⎯ 3.2 ⎯
Reverse Transfer Capacitance C
rss
⎯ 2.0 ⎯
Gate Resistance R
G
⎯ 79.9 ⎯ Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V Q
g
⎯ 0.87 ⎯
nC
V
GS
= 10V, V
DS
= 30V,
I
D
= 150mA
Total Gate Charge V
GS
= 4.5V Q
g
⎯ 0.43 ⎯
Gate-Source Charge Q gs
⎯ 0.11 ⎯
Gate-Drain Charge Q
gd
⎯ 0.11 ⎯
Turn-On Delay Time t
D(on)
⎯ 3.3 ⎯
nS
V
DD
= 30V, I
D
= 0.115A, V
GEN
= 10V
,
R
GEN
= 25 Ω
Turn-On Rise Time t r
⎯ 3.2 ⎯
Turn-Off Delay Time t
D(off)
⎯ 12.0 ⎯
Turn-Off Fall Time t
f
⎯ 6.3 ⎯
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.