Diodes DMS3016SSSA - Manual (Page 2)

DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DMS3016SSSA
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 4) V
GS
= 4.5V
Steady
State
T A = 25°C
T A = 85°C
I
D
9.8
6.3
A
Pulsed Drain Current (Note 5) I
DM
90 A
Avalanche Current (Note 5) (Note 6) I
AR
13 A
Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH E
AR
25.4 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
1.54 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 81 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I DSS
- - 1.0 mA V DS = 30V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 - 2.3 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R DS (ON)
- 9 13
mΩ
V
GS
= 10V, I
D
= 9.8A
- 11 16 V
GS
= 4.5V, I
D
= 9.8A
Forward Transfer Admittance |Y fs | - 11 - S V DS = 5V, I D = 9.8A
Diode Forward Voltage V
SD
- 0.35 0.6 V V
GS
= 0V, I
S
= 1A
Maximum Body-Diode + Schottky Continuous Current I
S
- - 5 A -
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 1849 - pF
V
DS
=15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 158 - pF
Reverse Transfer Capacitance C rss
- 123 - pF
Gate Resistance R
g
0.53 2.68 4.82 Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 18.5 - nC
V
DS
= 15V, V
GS
= 10V,
I
D
= 9.8A
Total Gate Charge V GS = 10V Q g
- 43 - nC
Gate-Source Charge Q
gs
- 4.7 - nC
Gate-Drain Charge Q
gd
- 4.0 - nC
Turn-On Delay Time t
D(on)
- 6.62 - ns
V
GS
= 10V, V
DS
= 10V,
R G = 3 Ω, R
L = 1.2 Ω
Turn-On Rise Time t
r
- 8.73 - ns
Turn-Off Delay Time t
D(off)
- 36.41 - ns
Turn-Off Fall Time t
f
- 4.69 - ns
Notes: 4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.
5. Repetitive rating, pulse width limited by junction temperature.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.