Diodes DMB53D0UDW User Manual

Dmb53d0udw, Features, Mechanical data

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DMB53D0UDW

Document number: DS31675 Rev. 5 - 2

1 of 7

www.diodes.com

December 2009

© Diodes Incorporated

DMB53D0UDW

N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR

Features

N-Channel MOSFET and NPN Transistor in One Package

• Low

On-Resistance

Very Low Gate Threshold Voltage, 1.0V max

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead, Halogen and Antimony Free, RoHS Compliant (Note

2

)

ESD Protected MOSFET Gate up to 2kV

"Green" Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case:

SOT-363

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42 Lead frame.
Solderable per MIL-STD-202, Method 208

Marking Information: See Page 5

Ordering Information: See Page 5

Weight: 0.006 grams (approximate)
















Maximum Ratings – MOSFET, Q1

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

50 V

Gate-Source Voltage

V

GSS

±12

V

Drain Current (Note 1)

Continuous

I

D

160 mA

Pulsed Drain Current (Note 1)

I

DM

560 mA



Maximum Ratings - NPN Transistor, Q2

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Collector-Base Voltage

V

CBO

50 V

Collector-Emitter Voltage

V

CEO

45 V

Emitter-Base Voltage

V

EBO

6.0 V

Collector Current

I

C

100 mA



Thermal Characteristics, Total Device

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Total Power Dissipation (Note 1)

P

D

250 mW

Thermal Resistance, Junction to Ambient (Note 1)

R

θJA

500

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.







SOT-363

TOP VIEW

Internal Schematic

TOP VIEW

ESD protected gate up to 2kV

E

D

2

S

2

Q

1

G

2

Q

2

B

C

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