Diodes DMB54D0UDW - Manual (Page 2)

DMB54D0UDW
Document number: DS31677 Rev. 4 - 2
2 of 7
www.diodes.com
December 2009
© Diodes Incorporated
DMB54D0UDW
Electrical Characteristics - MOSFET
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯ ⎯
V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 10 μA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯ 1.0
5.0
μA
V
GS
=
±8V, V
DS
= 0V
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(th)
0.7 0.8 1.0 V V DS = V GS , I D = 250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯ 3.1 4 Ω V
GS
= 4V, I
D
= 100mA
⎯ 4 5 V
GS
= 2.5V, I
D
= 80mA
Forward Transconductance g
FS
180 ⎯ ⎯ mS
V DS = 10V, I D = 100mA,
f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ 25 ⎯ pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
⎯ 5 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 2.1 ⎯ pF
Electrical Characteristics - PNP Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 4) V
(BR)CBO
-50 — — V I
C
= 10 μA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 4) V
(BR)CEO
-45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 4) V
(BR)EBO
-5 — — V I
E
= 1
μA, I
C
= 0
DC Current Gain (Note 4) h
FE
220 290 475 — V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage (Note 4) V
CE(SAT)
—
—
— -100
-400
mV
I C = -10mA, I B = -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 4) V
BE(SAT)
—
— -700
-900 —
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 4) V BE(ON)
-600
—
—
— -750
-820
mV
V CE = -5.0V, I C = -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 4) I
CBO
—
— —
— -15
-4.0
nA
µA V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Collector-Emitter Cut-Off Current (Note 4) I
CES
— — -100 nA V
CE
= -45V
Gain Bandwidth Product f
T
100 — — MHz V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance C
OB
— — 4.5 pF V
CB
= -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
I
C
= -0.2mA, V
CE
= -5.0Vdc,
R
S
= 2.0K Ω, f = 1.0KHz, BW = 200Hz
Notes: 4. Short duration pulse test used to minimize self-heating effect.