Diodes DMB54D0UV - Manual (Page 3)

DMB54D0UV
Document number: DS31676 Rev. 5 - 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMB54D0UV
Electrical Characteristics - PNP Transistor
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 5) V (BR)CBO
-50 — — V I
C = 10
μA, I
B = 0
Collector-Emitter Breakdown Voltage (Note 5) V
(BR)CEO
-45 — — V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 5) V
(BR)EBO
-5 — — V I
E
= 1 μA, I
C
= 0
DC Current Gain (Note 5) h FE
220 290 475 — V
CE = -5.0V, I C = -2.0mA
Collector-Emitter Saturation Voltage (Note 5) V
CE(SAT)
—
—
— -100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage (Note 5) V
BE(SAT)
—
— -700
-900 —
—
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage (Note 5) V
BE(ON)
-600
—
—
— -750
-820
mV
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
Collector-Cutoff Current (Note 5) I
CBO
—
— —
— -15
-4.0
nA
µA V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
Collector-Emitter Cut-Off Current (Note 5) I CES
— — -100 nA V CE = -45V
Gain Bandwidth Product f
T
100 — — MHz V
CE
= -5.0V, I
C
= -10mA, f = 100MHz
Output Capacitance C
OB
— — 4.5 pF V
CB
= -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
I C = -0.2mA, V CE = -5.0Vdc,
R S = 2.0K
Ω, f = 1.0KHz, BW = 200Hz
MOSFET
Fig. 1 Typical Output Characteristics
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V = 1.0V
GS
V = 1.5V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 3.0V
GS
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
0.1
0.2
0.3
0.4
0.5
0 1 2 3 4
V = 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A