Diodes DMG1026UV - Manual (Page 2)

DMG1026UV
Document number: DS35068 Rev. 6 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG1026UV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
410
300
mA
Continuous Drain Current (Note 6) V
GS
= 10V t ≤ 10s
T
A
= +25°C
T
A
= +85°C
I
D
440
320
mA
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
380
270
mA
Continuous Drain Current (Note 6) V
GS
= 4.5V t ≤ 10s
T
A
= +25°C
T
A
= +85°C
I
D
410
295
mA
Pulsed Drain Current (Note 7) I
DM
1.0 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P
D
0.58 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) R
θJA
213 °C/W
Power Dissipation (Note 6) t ≤ 10s P
D
0.65 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 6) t ≤ 10s R
θJA
192 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA V
DS
= 50V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±50 nA V
GS
= ±5V, V
DS
= 0V
— — ±150 nA V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.8 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 1.2 1.8
Ω
V
GS
= 10V, I
D
= 500mA
— 1.4 2.1 V
GS
= 4.5V, I
D
= 200mA
Forward Transfer Admittance |Y
fs
| 80 580 — mS V
DS
= 10V, I
D
= 200mA
Continuous Source Current (Note 8) I
S
— — 200 mA -
Diode Forward Voltage V
SD
— 0.8 1.3 V V
GS
= 0V, I
S
= 200mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 32 —
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 4.4 —
Reverse Transfer Capacitance C
rss
— 2.9 —
Gate Resistance R
g
— 126 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
— 0.45 —
pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
— 0.08 —
Gate-Drain Charge Q
gd
— 0.08 —
Turn-On Delay Time t
D(on)
— 3.4 — ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150Ω, R
G
= 25Ω,
I
D
= 200mA
Turn-On Rise Time t
r
— 3.4 — ns
Turn-Off Delay Time t
D(off)
— 26.4 — ns
Turn-Off Fall Time t
f
— 16.3 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s.
7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.