Diodes DMN4026SSD - Manual (Page 2)

DMN4026SSD
Document number: DS36351 Rev. 3 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN4026SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.0
5.6
A
T<10s
T A = +25°C
T
A
= +70°C
I
D
9.0
7.2
A
Maximum Continuous Body Diode Forward Current (Note 7) I
S
2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
70 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
98
°C/W
t<10s 59
Total Power Dissipation (Note 7)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
R θJA
71
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 7) R θJC 11.8
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV
DSS
40   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V GS(th)
1  3 V V DS = V GS , I D = 250µA
Static Drain-Source On-Resistance R
DS(ON)
 15 24
m Ω
V GS = 10V, I D = 6A
 20 32 V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage V
SD
 0.7 1.0 V V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C
iss
 1060 
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
 84 
Reverse Transfer Capacitance C
rss
 58 
Gate Resistance R
G
 1.6  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V GS = 4.5V) Q g
 8.8 
nC 
V
DS
= 20V, I
D
= 8A
Total Gate Charge (V GS = 10V) Q g
 19.1 
Gate-Source Charge Q
gs
 3.0 
Gate-Drain Charge Q
gd
 2.5 
Turn-On Delay Time t
D(on)
 5.3 
nS
V
DD
= 25V, R
L
= 2.5 Ω
V
GS
= 10V, R
G
= 3 Ω
Turn-On Rise Time t
r
 7.1 
Turn-Off Delay Time t
D(off)
 15.1 
Turn-Off Fall Time t f
 4.8 
Body Diode Reverse Recovery Time t
rr
 10.5  nS I
F
= 8A, di/dt = 100A/ μs
Body Diode Reverse Recovery Charge Q
rr
 4.15  nC I
F
= 8A, di/dt = 100A/ μs
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.