Diodes DMN4031SSD - Manual (Page 2)

DMN4031SSD
Document number: DS35410 Rev. 4 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN4031SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.42 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
88 °C/W
Total Power Dissipation (Note 6) P
D
2.6 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
48 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40 — — V V
GS
= 0V, I
D
= 10mA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.6 2.4 3.0 V V
DS
= V
GS
, I
D
= 250μA
On-state drain current I
D(ON)
20 — — A V
GS
= 10V, V
DS
= 5A
Static Drain-Source On-Resistance R
DS (ON)
— 19 31
mΩ
V
GS
= 10V, I
D
= 6A
— 44 50 V
GS
= 4.5V, I
D
= 5A
Forward Transfer Admittance |Y
fs
| — 11 — S V
DS
= 5V, I
D
= 6A
Diode Forward Voltage V
SD
— 0.74 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 945 — pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 69 — pF
Reverse Transfer Capacitance C
rss
— 58 — pF
Gate resistance R
g
— 1.45 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 8.4 — nC
V
GS
= 10V, V
DS
= 20V,
I
D
= 12A
Total Gate Charge (V
GS
= 10V) Q
g
— 18.6 — nC
Gate-Source Charge Q
gs
— 3.3 — nC
Gate-Drain Charge Q
gd
— 2.2 — nC
Turn-On Delay Time T
D(on)
— 6.4 — ns
V
GS
= 10V, V
DS
= 20V,
R
L
= 1.6Ω, R
G
= 3Ω
Turn-On Rise Time T
r
— 9.7 — ns
Turn-Off Delay Time T
D(off)
— 19.8 — ns
Turn-Off Fall Time T
f
— 3.1 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design
6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. No subject to production testing.
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.2
4.1
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.4
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.0
5.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.7
A
Pulsed Drain Current (Note 7) I
DM
20 A