Diodes DMN4030LK3 - Manual (Page 4)

DMN4030LK3
Document Number DS32008 Rev. 3 - 2
4 of 8
www.diodes.com
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4030LK3
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
40 ⎯ ⎯ V I
D
= 250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ 0.5 μA
V DS = 40V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0 ⎯ 3.0 V I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
⎯
0.021 0.030
Ω
V
GS
= 10V, I
D
= 12A
0.037 0.050 V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 8 & 9) g fs
⎯ 22.8 ⎯ S V DS = 15V, I D = 12A
Diode Forward Voltage (Note 8) V
SD
⎯ 0.95 1.1 V I
S
= 12A, V
GS
= 0V
Reverse recovery time (Note 9) t
rr
135 ⎯ ns
I
S
= 12A, di/dt = 100A/
μs
Reverse recovery charge (Note 9) Q rr
⎯ 799 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 604 ⎯ pF
V
DS
= 20V, V
GS
= 0V
f= 1MHz
Output Capacitance C oss
⎯ 106 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 59.6 ⎯ pF
Total Gate Charge (Note 10) Q
g
⎯ 6.5 ⎯ nC V
GS
= 4.5V
V
DS
= 20V
I
D
= 12A
Total Gate Charge (Note 10) Q g
⎯ 12.9 ⎯ nC
V
GS
= 10V Gate-Source Charge (Note 10) Q
gs
⎯ 2.3 ⎯ nC
Gate-Drain Charge (Note 10) Q
gd
⎯ 3.6 ⎯ nC
Turn-On Delay Time (Note 10) t D(on)
⎯ 4.2 ⎯ ns
V
DD
= 20V, V
GS
= 10V
I D = 12A, R G
≅ 6.0Ω
Turn-On Rise Time (Note 10) t
r
⎯ 12.4 ⎯ ns
Turn-Off Delay Time (Note 10) t
D(off)
⎯ 13.8 ⎯ ns
Turn-Off Fall Time (Note 10) t
f
⎯ 10.7 ⎯ ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.