Diodes DMN4034SSS - Manual (Page 2)

DMN4034SSS
Document Number DS32106 Rev 2 - 2
2 of 9
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4034SSS
ADVAN
CE I
N
F
O
RM
ATI
O
N Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
40 V
Gate-Source voltage (Note 2) V GS
±20 V
Single Pulsed Avalanche Energy (Note 7) E
AS
27 mJ
Single Pulsed Avalanche Current (Note 7) I
AS
15.25 A
Continuous Drain current V
GS
= 10V
(Note 4)
I
D
7.2
A T
A
= 70°C (Note 4) 5.8
(Note 3) 5.4
Pulsed Drain current V
GS
= 10V (Note 5) I
DM
33.0 A
Continuous Source current (Body diode) (Note 4) I
S
4.1 A
Pulsed Source current (Body diode) (Note 5) I
SM
33.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
1.56
12.5
W
mW/ °C
(Note 4)
2.8
22.5
Thermal Resistance, Junction to Ambient
(Note 3)
R θJA
80
°C/W (Note 4) 44.5
Thermal Resistance, Junction to Lead (Note 6) R θJL 37
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t
≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 100µH, V
DD
= 40V.