Diodes DMN5L06TK - Manual (Page 2)

DMN5L06TK
Document number: DS30926 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMN5L06TK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain Source Voltage V
DSS
50 V
Gate-Source Voltage V GSS
±20 V
Drain Current (Note 5) Continuous I
D
280 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
150 mW
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
50 ⎯ ⎯ V V GS = 0V, I D = 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C I
DSS
⎯ ⎯ 60 nA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
⎯ ⎯
1
500
50
μA
nA
nA V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.49 ⎯ 1.2 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R DS (ON)
⎯
⎯
⎯
1.8
1.5
1.2 3.0
2.5
2.0
Ω
V GS = 1.8V, I D = 50mA
V GS = 2.5V, I D = 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current I
D(ON)
0.5 1.4 ⎯ A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance |Y
fs
| 200 ⎯ ⎯ mS V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
⎯ ⎯ 50 pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.