Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN5L06WK User Manual

Page 2: Dmn5l06wk

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DMN5L06WK

Document number: DS30928 Rev. 8 - 2

2 of 6

www.diodes.com

March 2014

© Diodes Incorporated

DMN5L06WK

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

V

DSS

50

V

Gate-Source Voltage

V

GSS

20

V

Drain Current (Note 5)

Continuous

Pulsed (Note 6)

I

D

300
800

mA



Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

250

mW

Thermal Resistance, Junction to Ambient

R

θJA

500

C/W

Operating and Storage Temperature Range

T

J

, T

STG

-65 to +150

C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

50

V

V

GS

= 0V, I

D

= 10μA

Zero Gate Voltage Drain Current

@T

C

= +25°C

I

DSS

60

nA

V

DS

= 50V, V

GS

= 0V

Gate-Body Leakage

I

GSS

1

500

50

μA
nA
nA

V

GS

= ±12V, V

DS

= 0V

V

GS

= ±10V, V

DS

= 0V

V

GS

= ±5V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.49

1.0

V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)







3.0
2.5
2.0

V

GS

= 1.8V, I

D

= 50mA

V

GS

= 2.5V, I

D

= 50mA

V

GS

= 5.0V, I

D

= 50mA

On-State Drain Current

I

D(ON)

0.5

1.4

A

V

GS

= 10V, V

DS

= 7.5V

Forward Transconductance

|Y

fs

|

200

mS

V

DS

=10V, I

D

= 0.2A

Source-Drain Diode Forward Voltage

V

SD

0.5

1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

50

pF

V

DS

= 25V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

25

pF

Reverse Transfer Capacitance

C

rss

5.0

pF

Turn-On Delay Time

t

D(on)

2.1

ns

V

DD

= 30V, V

GS

= 10V,

R

G

= 25Ω, I

D

= 200mA

Turn-On Rise Time

t

r

1.8

ns

Turn-Off Delay Time

t

D(off)

14.4

ns

Turn-Off Fall Time

t

f

8.4

ns

Notes:

5. Device mounted on FR-4 PCB.

6.

Pulse

width

10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.


















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