Diodes DMN601VK - Manual

DMN601VK
Document number: DS30655 Rev. 4 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated
DMN601VK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563
S
1
D
1
D
2
S
2
G
1
G
2
ESD Protected up to 2kV
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
305
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 1) P
d
250 mW
Thermal Resistance, Junction to Ambient R
θJA
500 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 250 nA V
DS
= 50V, V
GS
= 0V
⎯ ⎯ ±500 V
GS
= ±10V, V
DS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.0 1.6 2.5 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 200mA
Forward Transfer Admittance |Y
fs
| ⎯ 284 ⎯ ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 5) V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯ ⎯ 50 pF
Output Capacitance C
oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 5.0 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.