Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN6040SK3 User Manual
Page 2
DMN6040SK3
Document number: DS35733 Rev. 5 - 2
2 of 6
June 2014
© Diodes Incorporated
DMN6040SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
C
= +25°C
T
C
= +100°C
I
D
20
13
A
Maximum Body Diode Forward Current (Note 5)
I
S
4 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
30 A
Avalanche Current (Note 6)
I
AR
14.2 A
Avalanche Energy (Note 6)
E
AR
10 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
C
= +25°C
P
D
42
W
T
C
= +100°C
17
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
44
°C/W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
3
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1 µ
A
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1
⎯
3 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
30 40
m
Ω
V
GS
= 10V, I
D
= 20A
⎯
35 50
V
GS
= 4.5V, I
D
= 12A
Diode Forward Voltage
V
SD
⎯
0.7 1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
1287
⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
57
⎯
Reverse Transfer Capacitance
C
rss
⎯
44
⎯
Gate Resistance
R
G
⎯
1.2
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V)
Q
g
⎯
22.4
⎯
nC
V
DS
= 30V, I
D
= 4.3A
Total Gate Charge (V
GS
= 4.5V)
Q
g
⎯
10.4
⎯
Gate-Source Charge
Q
gs
⎯
4.9
⎯
Gate-Drain Charge
Q
gd
⎯
3.0
⎯
Turn-On Delay Time
t
D(on)
⎯
6.6
⎯
nS
V
GS
= 10V, V
DD
= 30V, R
G
= 6
Ω,
I
D
= 4.3A
Turn-On Rise Time
t
r
⎯
8.1
⎯
Turn-Off Delay Time
t
D(off)
⎯
20.1
⎯
Turn-Off Fall Time
t
f
⎯
4.0
⎯
Body Diode Reverse Recovery Time
t
rr
⎯
18
⎯
nS
I
S
= 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
⎯
11.9
⎯
nC
I
S
= 4.3A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. UIS in production with L = 0.1mH, T
J
= +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.