Diodes DMN6040SFDE - Manual (Page 2)

DMN6040SFDE
D atasheet number: DS35792 Rev. 8 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMN6040SFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V GS = 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.3
4.1
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
6.5
5.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I DM
30 A
Maximum Body Diode Continuous Current I
S
2.5 A
Avalanche Current (Note 7) L = 0.1mH I
AR
14.2 A
Avalanche Energy (Note 7) L = 0.1mH E AR
10 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T A = +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
189
°C/W
t<10s 132
Total Power Dissipation (Note 6)
T
A
= +25°C
P D
2.03
W
T
A
= +70°C 1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
61
°C/W t<10s 43
Thermal Resistance, Junction to Case (Note 6) R θJC 9.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
60 ⎯ ⎯ V V GS = 0V, I D = 250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 100 nA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1 ⎯ 3 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 30 38
m
Ω
V
GS
= 10V, I
D
= 4.3A
⎯ 35 47 V GS = 4.5V, I D = 4A
Forward Transfer Admittance |Y
fs
|
⎯ 4.5 ⎯ S V
DS
= 10V, I
D
= 4.3A
Diode Forward Voltage V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 1287 ⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 57 ⎯
Reverse Transfer Capacitance C rss
⎯ 44 ⎯
Gate Resistance R
G
⎯ 1.2 ⎯ Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
⎯ 22.4 ⎯
nC V
DS
= 30V, I
D
= 4.3A
Total Gate Charge (V
GS
= 4.5V) Q
g
⎯ 10.4 ⎯
Gate-Source Charge Q
gs
⎯ 4.9 ⎯
Gate-Drain Charge Q
gd
⎯ 3.0 ⎯
Turn-On Delay Time t
D(on)
⎯ 6.6 ⎯
nS
V
GS
= 10V, V
DD
= 30V, R
G
= 6 Ω,
I
D
= 4.3A
Turn-On Rise Time t
r
⎯ 8.1 ⎯
Turn-Off Delay Time t
D(off)
⎯ 20.1 ⎯
Turn-Off Fall Time t
f
⎯ 4.0 ⎯
Body Diode Reverse Recovery Time t rr
⎯ 18 ⎯ nS I S = 4.3A, dI/dt = 100A/ μs
Body Diode Reverse Recovery Charge Q
rr
⎯ 11.9 ⎯ nC I
S
= 4.3A, dI/dt = 100A/ μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.