Maximum ratings, Thermal characteristics – Diodes DMN6068LK3 User Manual
Page 2
DMN6068LK3
Document Number DS32057 Rev 4 - 2
2 of 8
May 2013
© Diodes Incorporated
DMN6068LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source voltage
V
DSS
60
V
Gate-Source voltage
(Note 5)
V
GS
±20
V
Single Pulsed Avalanche Energy
(Note 11)
E
AS
37.5
mJ
Single Pulsed Avalanche Current
(Note 11)
I
AS
5.0
A
Continuous Drain current
V
GS
= 10V
(Note 7)
I
D
8.5
A
T
A
= 70
°C (Note 7)
6.8
(Note 6)
6.0
Pulsed Drain current
V
GS
= 10V
(Note 8)
I
DM
22.2
A
Continuous Source current (Body diode)
(Note 7)
I
S
10.2
A
Pulsed Source current (Body diode)
(Note 8)
I
SM
22.2
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
4.12
33
W
mW/
°C
(Note 7)
8.49
67.9
(Note 9)
2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
30.3
°C/W
(Note 7)
14.7
(Note 9)
59.0
Thermal Resistance, Junction to Lead
(Note 10)
R
θJL
3.09
Operating and storage temperature range
T
J
, T
STG
-55 to +150
°C
Notes:
5. AEC-Q101 V
GS
maximum is ±16V.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note 2, except the device is measured at t
≤ 10 sec.
8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25• , V
DD
= 50V, starting T
J
= 25°C