Diodes DMN6066SSS - Manual (Page 2)

DMN6066SSS
Document Number DS32110 Rev 2 - 2
2 of 9
www.diodes.com
November 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN6066SSS
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
60 V
Gate-Source voltage (Note 2) V
GS
±20 V
Single Pulsed Avalanche Energy (Note 7) E
AS
37.5 mJ
Single Pulsed Avalanche Current (Note 7) I
AS
5.0 A
Continuous Drain current V GS = 10V
(Note 4)
I D
5.0
A T A = 70°C (Note 4) 4.0
(Note 3) 3.7
Pulsed Drain current V
GS
= 10V (Note 5) I
DM
23 A
Continuous Source current (Body diode) (Note 4) I
S
4.0 A
Pulsed Source current (Body diode) (Note 5) I SM
23 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
1.56
12.5
W
mW/ °C
(Note 4)
2.81
22.5
Thermal Resistance, Junction to Ambient
(Note 3)
R θJA
80.0
°C/W (Note 4) 44.5
Thermal Resistance, Junction to Lead (Note 6) R θJL 37.0
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t
≤ 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25 Ω, V
DD
=50V, starting T
J
= 25°C.