Diodes DMN6068SE - Manual (Page 2)

DMN6068SE
Document Number DS32033 Rev. 4 - 2
2 of 9
www.diodes.com
September 2013
© Diodes Incorporated
DMN6068SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
60 V
Gate-Source voltage (Note 6) V
GS
20 V
Single Pulsed Avalanche Energy (Note 11) E
AS
37.5 mJ
Single Pulsed Avalanche Current (Note 11) I
AS
5.0 A
Continuous Drain current V
GS
= 10V
(Note 8)
I
D
5.6
A T
A
= +70°C (Note 8) 4.5
(Note 7) 4.1
Pulsed Drain current V
GS
= 10V (Note 9) I
DM
20.8 A
Continuous Source current (Body diode) (Note 8) I
S
4.9 A
Pulsed Source current (Body diode) (Note 9) I
SM
20.8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 7)
P
D
2.0
16.0 W
mW/°C
(Note 8)
3.7
29.5
Thermal Resistance, Junction to Ambient
(Note 7)
R
θJA
62.5
°C/W (Note 8) 34
Thermal Resistance, Junction to Lead (Note 10) R
θJL
11.5
Operating and storage temperature range T
J
, T
STG
-55 to +150 °C
Notes: 6. AEC-Q101 V
GS
maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t  10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25Ω, V
DD
=50V, starting T
J
= +25°C.