Diodes DMN6140L - Manual (Page 2)

DMN6140L
Document number: DS35621 Rev. 3 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN6140L
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1.6
1.2
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
2.0
1.6
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.3
1.8
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
2.9
2.3
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
1.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.7
W
T
A
= +70°C 0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
ΘJA
183
°C/W
t<10s 115
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R ΘJA
94
°C/W t<10s 61
Thermal Resistance, Junction to Case R ΘJC 39
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 — 3 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
—
92 140
m Ω
V
GS
= 10V, I
D
= 1.8A
115 170 V
GS
= 4.5V, I
D
= 1.3A
Forward Transfer Admittance |Y
fs
| — 2.2 — S V
DS
= 15V, I
D
= 1.8A
Diode Forward Voltage V
SD
— 0.75 1.0 V V
GS
= 0V, I
S
= 0.45A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 315 —
pF
V
DS
= 40V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 18 —
Reverse Transfer Capacitance C
rss
— 16 —
Gate Resistnace R
g
— 0.65 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V) Q
g
— 8.6 —
nC V
DS
= 30V, I
D
= 1.8A
Total Gate Charge (V
GS
= 5V) Q
g
— 4.1 —
Gate-Source Charge Q
gs
— 1.0 —
Gate-Drain Charge Q
gd
— 1.7 —
Turn-On Delay Time t
D(on)
— 2.6 —
ns
V
DS
= 30V, V
GS
= 10V,
R
G
= 6.0 Ω, I
D
= 1.8A
Turn-On Rise Time t
r
— 3.6 —
Turn-Off Delay Time t
D(off)
— 16.3 —
Turn-Off Fall Time t
f
— 2.7 —
Reverse recovery time t
rr
— 16.8 — ns
I
F
= 1.8A, di/dt =100A/ μs
Reverse recovery charge Q
rr
— 9.0 — nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.