Dmn66d0lw new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN66D0LW User Manual

Page 2: Electrical characteristics, Dmn66d0lw

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DMN66D0LW

Document number: DS31483 Rev. 2 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DMN66D0LW

NEW PROD

UC

T





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

60 V

Gate-Source Voltage (Note 5)

Continuous

V

GSS

±20 V

Drain Current (Note 5)

Continuous

Continuous @ +100°C

Pulsed

I

D

115

73

800

mA




Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Total Power Dissipation

P

D

200 mW

Thermal Resistance, Junction to Ambient

R

JA

625 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

60 70

V

V

GS

= 0V,

I

D

= 10µA

Zero Gate Voltage Drain Current

@ T

C

= +25°C

@ T

C

= +125°C

I

DSS

1.0

500

µA

V

DS

= 60V,

V

GS

= 0V

Gate-Body Leakage

I

GSS

±5

µA

 V

GS

=

±20V,

V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.2

2.0 V

V

DS

= V

GS

,

I

D

= 250

A

Static Drain-Source On-Resistance

@ T

J

= +25°C

@ T

J

= +125°C

R

DS(ON)

3.5
3.0

6
5

V

GS

= 5.0V,

I

D

=

0.115A

V

GS

= 10V, I

D

=

0.115A

Forward Transconductance

g

FS

80

mS V

DS

= 10V,

I

D

=

0.115A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

23

pF

V

DS

= 25V,

V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

3.4

pF

Reverse Transfer Capacitance

C

rss

1.4

pF

SWITCHING CHARACTERISTICS(Note 7)
Turn-On Delay Time

t

D(ON)

10

ns

V

DD

= 30V, I

D

= 0.115A,

R

L

= 150

,

V

GEN

= 10V

,

R

GEN

= 25

Turn-Off Delay Time

t

D(OFF)

33

ns

Notes:

5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.















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