Diodes DMG4N65CT - Manual (Page 4)

DMG4N65CT
Document number: DS35719 Rev. 4 - 2
4 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG4N65CT
ADVAN
CE I
N
F
O
RM
ATI
O
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 100 200 300 400 500 600
1
10
100
1,000
I,
D
R
AI
N L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.001 0.01 0.1 1 10 100 1,000 10,000
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
R = r * R
θJA(t) (t) θ
θ
JA
JA
R = 106 C/W
Duty Cycle, D = t1/t2
°
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse